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Liquid Phase
Epitaxial (LPE) Reactor
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This processing equipment is
designed for the safe growth of GaAs, GaAlAs, InP, InGaAlAsP and other
compound semiconductor epitaxial layers. It is a safe and precise tool
designed to achieve optimum results in the development of opto-electronic
devices. The system employs high quality flow and temperature control devices.
All lines are stainless steel seamless tubing, polished inside to RMS 14.
All valves are bellow-sealed stainless steel valves. Joints are VCR or
ultra-torr, ensuring a high quality sealing and low leak rate. The system
can be customized in size, degree of automation, and options provided. |
Specifications
| Temperature
Control |
Ambient to
1200°C |
| Temperature
Profile |
750 - 1200°C
+/- 0.5°C over the active "flat zone" of the system (12" or more) |
| Temperature
Stability |
+/- 0.5°C
for 72 hr with line voltage fluctuating +/- 5% |
| Leak Rate |
Equal or better
than 2 x 10 cc/sec @ atm. press. |
| Process
Tube |
2.0" dia.,
12" flat zone, 3 zone furnace, 3280 W. |
| 2.7" dia.,
12" flat zone, 3 zone furnace, 5400 W. (other sizes available) |
| 4.0" dia.,
18" flat zone, 3 zone furnace, 12000 W. |
| Process Gas |
Hydrogen, 0
- 5 lpm; Nitrogen 0 - 5 lpm |
| Process Cooling |
Forced air
@ ambient temperature |
| Alarm |
Hydrogen leak
detector |
| Enclosure |
16 ga rolled
steel enclosure, baked enamel paint finish; removable front panel with
safety viewing glass |
| Layer Thickness |
A 1000 |
| Power |
208 - 220 volt,
1 phase |
| Vent |
6" dia. duct
connection for forced or natural convection |
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